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X波段宽带低噪声放大器设计

  • 谢涛 ,
  • 周以国 ,
  • 郭俊栋
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  • 中国科学院电子学研究所,北京 100080

收稿日期: 1900-01-01

  修回日期: 1900-01-01

  网络出版日期: 2008-05-15

Design of an X Band Broadband Low Noise Amplifier

  • XIE Tao ,
  • ZHOU Yi-guo ,
  • GUO Jun-dong
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  • Institute of Electronics Chinese Academy of Sciences, Beijing 100080, China

Received date: 1900-01-01

  Revised date: 1900-01-01

  Online published: 2008-05-15

摘要

介绍与实现了一种X波段宽带低噪声放大器(LNA)。该放大器选用NEC公司的低噪声放大管NE3210S01(HJFET),采用微带分支线匹配结构和两级级联的方式。利用ADS软件进行设计、优化和仿真。最后研制的放大器在10-13GHz范围内增益为(21.5±1)dB,噪声系数小于2 dB,驻波比小于1.8。

本文引用格式

谢涛 , 周以国 , 郭俊栋 . X波段宽带低噪声放大器设计[J]. 中国科学院大学学报, 2008 , 25(3) : 408 -412 . DOI: 10.7523/j.issn.2095-6134.2008.3.017

Abstract

An X band broadband low noise amplifier (LNA) is presented. This amplifier, using NEC’s HJFET NE3210S01, had a microstrip stub matching structure and a two-stage topology. ADS was used as a tool to design, optimize and simulate. The designed amplifier exhibited broadband operation from 10GHz-13GHz with noise figure less than 2dB, Gain 21.5dB±1dB and SWR less than 1.8.

Key words: LNA; NE3210S01; Noise Figure

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