收稿日期: 2002-06-27
修回日期: 2002-08-26
网络出版日期: 2003-01-18
基金资助
国家自然科学基金(19974055);973(19994506)资助项目
Template Synthesis of Metal Oxide Nanodot Films
Received date: 2002-06-27
Revised date: 2002-08-26
Online published: 2003-01-18
郜涛 , 孟国文 , 张立德 . 金属氧化物纳米点薄膜的模板法合成[J]. 中国科学院大学学报, 2003 , 20(1) : 69 -72 . DOI: 10.7523/j.issn.2095-6134.2003.1.011
A simple and convenient synthesis approach for metal oxide nanodot films has been reported. Porous anodic alumina (PAA) films with ordered nanocave arrays were fabricated firstly and used as template materials. Then the metals were evaporated on the surface of the PAA template following with oxidization in air. The prepared metal oxide thin films have highly ordered hemispherical nanodot arrays arranged in a hexagonal pattern. The density of the nanodots in the array is about 2×1013 /m2 with dot diameters and heights about 100 nm and 45 nm, respectively.
Key words： nanodot films; template synthesis; metal oxide
[1] Banin U, Cao Y W, Katz D, et al. Identification of atomic-like electronic state in indium arsenide nanocrystal quantum dots. Nature, 1999, 400:542 ~ 544
[2] Facako S, Dekorsy T, Koerdt C, et al. Formation of ordered nanoscale semiconductor dots by sputtering. Science, 1999, 285:1551~ 1553
[3] Springholz G, Holy V, Pincaolits M, et al. Self-organized growth of three-dimensional quantum-dot crystals with fcc-like stacking and a tunable lattice constant. Science, 1998, 282:734 ~ 737
[4] Gleiter H. Nanostructured materials: basic concepts and microstructure. Acta Mater, 2000, 48:1 ~ 29
[5] Ueta A, Avramescu A, Suemune I, et al. Nucleation and faceting in selectively grown ZnS pyramidal dot array for short-wavelength light emitters. Jpn J Appl Phys Part 2, 1999, 38(7A): L710 ~ L713
[6] Fafard S, Wasilewski Z R, Allen C Ni, et al Manipulating the energy levels of semiconductor quantum dots. Phys Rev B, 1999, 59(23): 15368 ~ 15373
[7] Nakajima A, Sugita Y, Kawamura K, et al. Si quantum dot formation with low-pressure chemical vapor deposition. Jpn J Appl Phys Part 2, 1996, 35(2B): L189 ~ L191
[8] Murray C B, Kagan C R, Bawendi M G. Self-organization of CdSe nanocrystallites into three-dimensional quantum dot superlattices. Science, 1995, 270:1335 ~ 1338
[9] Martin C R. Nanomaterials: a membrane-based synthetic approach. Science, 1994, 266:1961 ~ 1966
[10] Huczko A. Template-based synthesis of nanomaterials. Appl Phys A, 2000, 70:365 ~ 376
[11] Masuda H, Satoh M Fabrication of gold nanodot array using anodic porous alumina as an evaporation mask. Jpn J Appl Phys Part 2, 1996, 35(1B): L126 ~ L129
[12] Masuda H, Yasui K, Nishio K. Fabrication of ordered arrays of multiple nanodots using anodic porous alumina as an evaporation mask. Adv Mater, 2000, 12(14): 1031 ~ 1033
[13] Diggle J W, Downie T C, Goulding C W. Anodic oxide films on aluminum. Chem Rev, 1969, 69:365 ~ 405
[14] Li A P, Müller F, Birner A, et al. Hexagonal pore arrays with a 50~420 nm interpore distance formed by self-organization in anodic alumina. J Appl Phys, 1998, 84(11): 6023 ~ 6026
[15] Masuda H, Yamada H, Satoh M, et al. Highly ordered nanochannel-array architecture in anodic alumina. Appl Phys Lett, 1997,71(19): 2770 ~ 2772
[16] Zhang Lide, Meng Guowen, Phillipp F. Preparation of nanowires and microarrays. Chin Phys, 2001, 10(Suppl. ): S117 ~ S123
[17] Gao T, Fan J C, Meng G W, et al. Thin Au film with highly ordered arrays of hemispherical dots. Thin Solid Films, 2001, 401(1-2): 102 ~ 105
[18] 吴广明,王珏,汤学峰,等.锡薄膜等温氧化研究.物理学报,2000,49(5):1015~1018
[19] Zhang Z, Gekhtman D, Dresselhaus M S, et al. Processing and characterization of single-crystalline ultrafine bismuth nanowires.Chem Mater, 1999, 11:1659 ~ 1665
[20] Masuda H, Fukuda K. Ordered metal nanohole arrays made by a two-step replication of honeycomb structures of anodic alumina.Science, 1995, 268: 1466~ 1468
[21] Zubia D, Hersee S D. Nanoheteroepitaxy: the application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials. J Appl Phys, 1999, 85(9): 6492 ~ 6496
[22] Hadobas K, Kirsch S, Carl A, et al. Reflection properties of nanostructure-arrayed silicon surface. Nanotechnology, 2000, 11: 161~ 164
[23] Wu C, Crouch C H, Zhao L, et al. Near-unity below-band-gap absorption by microstructured silicon. Appl Phys Lett, 2001, 78(13): 1850 ~ 1852
[24] Aggarwal S, Ogale S B, Ganpule C S, et al. Oxide nanostructures through self-assembly. Appl Phys Lett, 2001, 78(10): 1442 ~1444
/
| 〈 |
|
〉 |
