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电子认证专栏

基于Nand Flash物理特性的签名私钥产生方法及其应用

  • 贾世杰 ,
  • 夏鲁宁 ,
  • 闻楠
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  • 1. 中国科学院数据与通信保护研究教育中心, 北京 100093;
    2. 中国科学院信息工程研究所, 北京 10093;
    3. 中国科学院大学, 北京 100049;
    4. 北京江南天安科技有限公司, 北京 100083

收稿日期: 2014-08-29

  修回日期: 2015-01-14

  网络出版日期: 2015-09-15

基金资助

国家科技支撑计划(2013BAH15F03)资助

Signature private key generation method based on the physical properties of Nand Flash and its applications

  • JIA Shijie ,
  • XIA Luning ,
  • WEN Nan
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  • 1. Data Assurance and Communication Security Center, Chinese Academy of Sciences, Beijing 100093, China;
    2. Institute of Information Engineering, Chinese Academy of Sciences, Beijing 100093, China;
    3. University of Chinese Academy of Sciences, Beijing 100049, China;
    4. Beijing Jiang Nan Tian An Technology Company, LTD, Beijing 100083, China

Received date: 2014-08-29

  Revised date: 2015-01-14

  Online published: 2015-09-15

摘要

Nand Flash是消费类电子设备常用的非易失性存储器件.利用Nand Flash芯片生产过程中所确定的物理特性,能够提取每芯片唯一的数字指纹信息.本文基于这种特性提出利用Nand Flash芯片的数字指纹产生SM2签名私钥的方法.这种方法提取的SM2签名私钥与Nand Flash器件具有可验证的紧耦合特征.本方法与具体的数字签名算法无关,可以应用在任何需要对存储器件或电子设备本身进行基于数字签名的身份鉴别的场合之中.

本文引用格式

贾世杰 , 夏鲁宁 , 闻楠 . 基于Nand Flash物理特性的签名私钥产生方法及其应用[J]. 中国科学院大学学报, 2015 , 32(5) : 695 -700 . DOI: 10.7523/j.issn.2095-6134.2015.05.017

Abstract

More and more consumer electronic devices are equipped with Nand Flash as nonvolatile memory device. Unique digital fingerprint information can be extracted from each Nand Flash chip by using the physical properties of Nand Flash, which are determined in the production process. We propose a new method, based on the physical properties of Nand Flash, to produce private keys for SM2 signature scheme, which is verifiably tight coupled to the Nand Flash device. Notably, this method is irrelevant to the specific digital signature schemes, and it is applicable to any occasion where digital signature scheme is used for identification of the storage devices or electronic devices.

参考文献

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