We demonstrated an intracavity frequency-doubled passively mode-locked Nd:LuVO4-LBO green laser with SESAM as the saturable absorber. The maximum average output power was 385 mW when the pump power was 9.3 W. The pulse width was 17.6 ps and the repetition rate was 76 MHz. The optical conversion efficiency from the pumping diode laser to the green laser was 4.1%. We observed the interference of the frequency-doubled green light with the normal operation of SESAM, analyzed the reason, and eventually resolved the problem.
[1] Young M D, Backus S, Durfee C, et al. Multiphoton imaging with a direct-diode pumped femtosecond Ti:sapphire laser[J]. Journal of Microscopy, 2013, 249(2):83-86.
[2] Novak O, Turcicova H, Smrz M, et al. Picosecond green and deep ultraviolet pulses generated by a high-power 100kHz thin-disk laser[J]. Optics Letters, 2016, 41(22):5210-5213.
[3] Peng R W, Guo L, Zhang X F, et al. 43W picosecond laser and second-harmonic generation experiment[J]. Optics Communications, 2009, 282(4):611-613.
[4] Li S, Li D, Zhao S, et al. 11MW peak power in doubly QML composite Nd:YVO4/Nd:YVO4/Nd:YVO4/KTP sub-nanosecond green laser with EO and Bi-GaAs[J]. Optics Express, 2016, 24(4):4022-4028.
[5] Kovalev A V, Polyakov V M, Mak A A, et al. Mode-locking in intracavity frequency doubled Nd:YVO4 Laser[C]//Clarkson W A, Shori R K. Solid State Lasers XXIV:Technology and Devices, Bellingham:Spie-Int Soc Optical Engineering, 2015:93421M.
[6] Tang W, Zhao S, Yang K, et al. Numerical simulation of subnanosecond single mode locking pulse generation in a doubly Q-switched and mode-locked green laser with EO and Cr4+:YAG[J]. Journal of the Optical Society of America B, 2015, 33(1):1-7.
[7] Wang W, Liu J, Chen F, et al. 532 nm picosecond pulse generated in a passively mode-locked Nd:YVO4 laser[J]. Chinese Optics Letters, 2009, 7(8):706-708.
[8] Pang Q S, Fu J, Chang L, et al. Laser diode end pumped intracavity frequency doubling semiconductor saturable absorber mirror passively mode-locked picosecond lasers[J]. Optics Communications, 2011, 284(20):4983-4985.
[9] Pang Q S, Chen M, Liu Z X, et al. LD end-pumped intracavity frequency doubling SESAM passively mode-locked picosecond lasers[J]. Laser Physics, 2011, 21(6):1031-1034.
[10] Cai W, Peng Q, Hou W, et al. Picosecond passively mode-locked laser of 532nm by reflective carbon nanotube[J]. Optics & Laser Technology, 2014, 58:194-196.
[11] Li Z H, Peng J Y, Yuan R X, et al. Compact and high repetition rate Kerr-lens mode-locked 532nm Nd:YVO4 laser[J]. Laser Physics, 2015, 25(11):115001.
[12] Li T, Zhao S Z, Zhuo Z, et al. Passively mode-locked YVO4/Nd:YVO4composite crystal green laser with a semiconductor saturable absorber mirror[J]. Laser Physics Letters, 2009, 6(1):30-33.
[13] Li L, Liu J, Liu M, et al. 532nm continuous wave mode-locked Nd:GdVO4 laser with SESAM[J]. Laser Physics Letters, 2009, 6(2):113-116.
[14] Liu B, Li Y, Jiang H L. Nd:LuVO4 as a true three-level laser[J]. Laser Physics Letters, 2011, 8(8):575-578.
[15] Maunier C, Doualan J L, Moncorge R, et al. Growth, spectroscopic characterization, and laser performance of Nd:LuVO4 a new infrared laser material that is suitable for diode pumping[J]. Journal of The Optical Society of America B-optical Physics, 2002, 19(8):1794-1800.
[16] Zhao S R, Zhang H J, Liu J H, et al. Growth of excellent-quality Nd:LuVO4 single crystal and laser properties[J]. Journal of Crystal Growth, 2005, 279(1/2):146-153.
[17] Nikogosyan D N. Lithium triborate (LBO):a review of its properties and applications[J]. Applied Physics A, 1994, 58(3):181-190.
[18] Mukhopadhyay P K, Alsous M B, Ranganathan K, et al. Analysis of laser-diode end-pumped intracavity frequency-doubled, passively Q-switched and mode-locked Nd:YVO4 laser[J]. Applied Physics B, 2004, 79(6):713-720.
[19] Keller U, Weingarten K J, Kartner F X, et al. Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers[J]. IEEE Journal of Selected Topics in Quantum Electronics, 1996, 2(3):435-453.
[20] Keller U. Recent developments in compact ultrafast lasers[J]. Nature, 2003, 424(6950):831-838.
[21] Paschotta R. Encyclopedia of laser physics and technology[M]. Weinheim:Wiley-VCH, 2008:416-418.
[22] Takahashi K, Hayakawa T, Suyama T, et al. energy-band structure of (AlAs) (GaAs) superlattices[J]. Journal of Applied Physics, 1988, 63(5):1729-1732.
[23] Linsheng L, Su L, Wenxin W, et al. Study of electron spin relaxation time in GaAs (110) quantum wells[J]. Journal of Semiconductors, 2007, 28(6):856-859.
