Based on the first-principle quantum transport simulation methods within the non-equilibrium Green function combined with density functional theory (NEGF+DFT), we predict that a magnetic tunnel junction (MTJ), consisting of a TiCl3 semi-metal electrode and a RhCl3 semiconducting scattering region, could be used as a spin-polarized transport device. We calculate the I-V curves in the ranges of small bias voltage (0-20 mV) and large bias voltage (0-0.6 V), respectively. In the range of small bias voltage, the current under parallel configuration (PC) is much larger than that under antiparallel configuration (APC). In addition, the tunneling magnetoresistance (TMR) always maintains a stable large value of 100%, and so does the spin injection efficiency (SIE) value under PC. In the range of large bias voltage, the TMR value decreases as the voltage increases, but the SIE value remains a stable value of 100%. The nonequilibrium transport properties are explained by analyzing the projected density of state.
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