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数学与物理学

单层VCl3和VBr3中相互作用导致的量子反常霍尔绝缘体到莫特绝缘体相变

  • 徐永峰 ,
  • 胜献雷 ,
  • 郑庆荣
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  • 1. 中国科学院大学物理科学学院, 北京 100049;
    2. 北京航空航天大学物理系 微纳测控与低维物理教育部重点实验室, 北京 100191

收稿日期: 2019-03-26

  修回日期: 2019-05-08

  网络出版日期: 2020-11-15

基金资助

Supported by the National Natural Science Foundation of China(11574309,11504013)

Correlation-driven topological phase transition from quantum anomalous Hall insulator to Mott insulator in monolayer VCl3 and VBr3

  • XU Yongfeng ,
  • SHENG Xianlei ,
  • ZHENG Qingrong
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  • 1 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
    2 Key Laboratory of Micro-Nano Measurement-Manipulation and Physics of Ministry of Education, Department of Physics, Beihang University, Beijing 100191, China

Received date: 2019-03-26

  Revised date: 2019-05-08

  Online published: 2020-11-15

Supported by

Supported by the National Natural Science Foundation of China(11574309,11504013)

摘要

基于第一性原理计算,发现在不考虑3d电子间关联作用的情况下,二维单层材料VCl3和VBr3是面内铁磁半导体,并且具有量子反常霍尔效应。VCl3能隙约为3.4 meV,VBr3没有全局的能隙。有趣的是,VCl3的陈数为3,有3个手性边缘态;VBr3的陈数为1,对应1个手性边缘态。当考虑关联作用U后,它们会变为Mott绝缘体。对于VCl3,相变点发生在U=0.45 eV;对于VBr3,相变点发生在U=0.35 eV。

本文引用格式

徐永峰 , 胜献雷 , 郑庆荣 . 单层VCl3和VBr3中相互作用导致的量子反常霍尔绝缘体到莫特绝缘体相变[J]. 中国科学院大学学报, 2020 , 37(6) : 736 -743 . DOI: 10.7523/j.issn.2095-6134.2020.06.003

Abstract

Based on the first-principle calculations, we propose that the monolayer VCl3 and VBr3 are quantum anomalous Hall insulators with in-plane magnetization without considering the correlation effect of the 3d electron-electron interaction. The band gap is predicted to be about 3.4 meV for VCl3, but no global gap for VBr3. It is interesting to note that VCl3 (VBr3) possesses a Chern number of C=3 (C=1) with three (one) chiral edge states. After considering correlation effect, we obtain Mott insulator if U>0.45 (U>0.35) eV for VCl3 (VBr3).

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