收稿日期: 2003-01-06
网络出版日期: 2003-07-10
基金资助
supportedbythemajorstatebasicresearchprogram(973)(G2000036603),"863 "ResearchPlan; andNationalNaturalScienceFoundationofChina(69876260)
Self-Assembled Germanium Quantum Dots in Silicon Germanium Material System
Received date: 2003-01-06
Online published: 2003-07-10
黄昌俊 , 王启明 . SiGe材料系自组织Ge量子点研究(英文)[J]. 中国科学院大学学报, 2003 , 20(4) : 510 -516 . DOI: 10.7523/j.issn.2095-6134.2003.4.019
In Silicon-based optoelectronics research, the self-assembled Ge quantum dots are one of the most promising potential means to explore the novel properties of Si by applying the bandgap engineering. The lattice mismatch of 4.2% between the Ge and Si can provide us various nanostructures in a wide range of size, which can be utilized to realize the future electrical and optical devices. By introducing the growth techniques and device application perspectives of self-assembled Ge quantum dots, describing the morphological evolution of the Ge grown on Si (001) substrate and the optical and electronic properties of these nanostructure,the authors reveal the approaches to fabricate the ordered Ge quantum dots. Some novel findings in our work will be included, such as the reverse shape transition of the quantum dots,the self-embedding effect, the verification of band alignment of Ge quantum dots, the thermal relaxation model of the carriers in Ge/Si multilayer structure, and a new approach to fabricate the patterned substrate for ordered Ge quantum dots.
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