关键词: Ge量子点, Si基光电子, 自组织纳米微结构, 异质外延生长

Abstract:

In Silicon-based optoelectronics research, the self-assembled Ge quantum dots are one of the most promising potential means to explore the novel properties of Si by applying the bandgap engineering. The lattice mismatch of 4.2% between the Ge and Si can provide us various nanostructures in a wide range of size, which can be utilized to realize the future electrical and optical devices. By introducing the growth techniques and device application perspectives of self-assembled Ge quantum dots, describing the morphological evolution of the Ge grown on Si (001) substrate and the optical and electronic properties of these nanostructure,the authors reveal the approaches to fabricate the ordered Ge quantum dots. Some novel findings in our work will be included, such as the reverse shape transition of the quantum dots,the self-embedding effect, the verification of band alignment of Ge quantum dots, the thermal relaxation model of the carriers in Ge/Si multilayer structure, and a new approach to fabricate the patterned substrate for ordered Ge quantum dots.

Key words: Ge quantum dots, Si-based optoelectronics, self-assembled nanostructure, heteroepitaxial crystal growth