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›› 2009, Vol. 26 ›› Issue (4): 563-568.DOI: 10.7523/j.issn.2095-6134.2009.4.019

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Realization of embedded programmable memorys word width configuration

CAI Gang1,2, YANG Hai-Gang1   

  1. 1. Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China;
    2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
  • Received:2008-12-30 Revised:2009-03-02 Online:2009-07-15

Abstract:

A scheme for realization of word-width configuration in embedded programmable memories using synchronous dual-port memory IP and standard cell is proposed. The method reduces the implementing complexity and further improves the designs efficiency. The structure of embedded programmable memorys word width configuration is optimized by registering the output control signals to improve the readout datas stability. Experiment results show that the optimized structure has the advantage of implementing complex circuits with higher performance. The embedded programmable memory based on this optimized structure has been fabricated in SMIC 0.18μm 1P6M CMOS process. According to the measurement results, the fabricated embedded programmable memorys readout data has good stability and it has comparable performance in readout time with the reference to those full custom commercial embedded programmable memories based on the similar process and memory capacity.

Key words: embedded programmable memory, word width configuration, memory IP, standard cell

CLC Number: