Design of an X Band Broadband Low Noise Amplifier

XIE Tao; ZHOU Yi-guo; GUO Jun-dong

doi:10.7523/j.issn.2095-6134.2008.3.017

Journal of University of Chinese Academy of Sciences >

2008 , Vol. 25 >Issue 3: 408 - 412

DOI: https://doi.org/10.7523/j.issn.2095-6134.2008.3.017

论文

Design of an X Band Broadband Low Noise Amplifier

XIE Tao ,
ZHOU Yi-guo ,
GUO Jun-dong

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Institute of Electronics Chinese Academy of Sciences, Beijing 100080, China

Received date: 1900-01-01

Revised date: 1900-01-01

Online published: 2008-05-15

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Abstract

An X band broadband low noise amplifier (LNA) is presented. This amplifier, using NEC’s HJFET NE3210S01, had a microstrip stub matching structure and a two-stage topology. ADS was used as a tool to design, optimize and simulate. The designed amplifier exhibited broadband operation from 10GHz-13GHz with noise figure less than 2dB, Gain 21.5dB±1dB and SWR less than 1.8.

Key words： LNA; NE3210S01; Noise Figure

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XIE Tao , ZHOU Yi-guo , GUO Jun-dong . Design of an X Band Broadband Low Noise Amplifier[J]. Journal of University of Chinese Academy of Sciences, 2008 , 25(3) : 408 -412 . DOI: 10.7523/j.issn.2095-6134.2008.3.017

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