A RF High Power Amplifier Bias circuits Design Technique

SHEN Ming; GENG Bo; YU Pei-Ling

doi:10.7523/j.issn.2095-6134.2006.1.015

Journal of University of Chinese Academy of Sciences >

2006 , Vol. 23 >Issue 1: 77 - 82

DOI: https://doi.org/10.7523/j.issn.2095-6134.2006.1.015

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A RF High Power Amplifier Bias circuits Design Technique

SHEN Ming ,
GENG Bo ,
YU Pei-Ling

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1. Graduate School of Chinese Academy of sciences, Beijing 100080;

2. Center for Space Science and Applied Research, Beijing 100080

Received date: 1900-01-01

Revised date: 1900-01-01

Online published: 2006-01-15

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Abstract

When conducting design of RF high power amplifier (HPA), the broadened microstrip λ/4 bias line for high DC current decreases the performance of the HPA. In this article, a thickened microstrip line is proposed to design the λ/4 drain bias circuit for HPA and is applied to a power amplifier for a miniaturized satellite transmitter. Measurement results showed that thickened bias line is feasible and useful for increasing HPA’s performance.

Key words： Power amplifier; Bias circuit; Small signal S parameter; Power added efficiency (PAE)

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SHEN Ming , GENG Bo , YU Pei-Ling . A RF High Power Amplifier Bias circuits Design Technique[J]. Journal of University of Chinese Academy of Sciences, 2006 , 23(1) : 77 -82 . DOI: 10.7523/j.issn.2095-6134.2006.1.015

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