Welcome to Journal of University of Chinese Academy of Sciences,Today is

Investigations of Microstructure and Electronic Structure of Ti3SiC2 and TiAl

  • YU Rong ,
  • HE Lian-Long ,
  • YE Heng-Qiang
Expand
  • Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China

Received date: 1900-01-01

  Revised date: 1900-01-01

  Online published: 2006-11-15

Abstract

Transmission electron microscopy and first-principles calculations are integrated to investigate the crystal structures and the microstructures of titanium-based intermetallics and ceramics on the nanometer, atomic, and electronic scales. The thesis contains three parts. (1) Distribution of W and the precipitation mechanism of the B2 phase in the lamellar structure of a TiAl alloy. The B2-stabilizing effect of W and its site preference can be explained well on the basis of the pseudo-gap effect and the strong covalent W-Ti bonding. (2) The polymorphism, electronic structure, and microstructure of Ti3SiC2. Unconventional stacking faults have been identified, which result from insertion of additional TiC layers into normal Ti3SiC2 crystal, instead of from the dissociation of dislocations as occurs in most materials. (3) The effect of alloying elements Si and Al on the twin boundary energy of TiC. It was found that Si and Al can reduce the twin boundary energy of TiC, leading to the formation of a lot of microtwins.

Cite this article

YU Rong , HE Lian-Long , YE Heng-Qiang . Investigations of Microstructure and Electronic Structure of Ti3SiC2 and TiAl[J]. Journal of University of Chinese Academy of Sciences, 2006 , 23(6) : 837 -841 . DOI: 10.7523/j.issn.2095-6134.2006.6.019

Outlines

/