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Signature private key generation method based on the physical properties of Nand Flash and its applications

  • JIA Shijie ,
  • XIA Luning ,
  • WEN Nan
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  • 1. Data Assurance and Communication Security Center, Chinese Academy of Sciences, Beijing 100093, China;
    2. Institute of Information Engineering, Chinese Academy of Sciences, Beijing 100093, China;
    3. University of Chinese Academy of Sciences, Beijing 100049, China;
    4. Beijing Jiang Nan Tian An Technology Company, LTD, Beijing 100083, China

Received date: 2014-08-29

  Revised date: 2015-01-14

  Online published: 2015-09-15

Abstract

More and more consumer electronic devices are equipped with Nand Flash as nonvolatile memory device. Unique digital fingerprint information can be extracted from each Nand Flash chip by using the physical properties of Nand Flash, which are determined in the production process. We propose a new method, based on the physical properties of Nand Flash, to produce private keys for SM2 signature scheme, which is verifiably tight coupled to the Nand Flash device. Notably, this method is irrelevant to the specific digital signature schemes, and it is applicable to any occasion where digital signature scheme is used for identification of the storage devices or electronic devices.

Cite this article

JIA Shijie , XIA Luning , WEN Nan . Signature private key generation method based on the physical properties of Nand Flash and its applications[J]. Journal of University of Chinese Academy of Sciences, 2015 , 32(5) : 695 -700 . DOI: 10.7523/j.issn.2095-6134.2015.05.017

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Outlines

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