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›› 2010, Vol. 27 ›› Issue (6): 782-787.DOI: 10.7523/j.issn.2095-6134.2010.6.008

• Research Articles • Previous Articles     Next Articles

A Σ-Δ fractional-N frequency synthesizer with low in-band phase noise

YU Yun-Feng1, YE Tian-Chun1, MA Cheng-Yan1,2, YUE Jian-Lian2, GAN Ye-Bing1   

  1. 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2. Hangzhou Zhongke Microelectronics Co Ltd, Hangzhou 310053, China
  • Received:2009-12-09 Revised:2010-05-11 Online:2010-11-15

Abstract:

In order to achieve low in-band phase noise in Σ-Δ fractional-N frequency synthesizers, a 5th-order 4bit Σ-Δ modulator is used to replace a 3rd-order MASH modulator. A 2.6GHz Σ-Δ fractional-N frequency synthesizer with low in-band phase noise and fast-locking characteristics was implemented in 0.25μm CMOS process. The measurement results show that the in-band phase noise of this synthesizer is -86.5dBc/Hz (at 40KHz offset), and all the spurs are less than - 65dBc. The whole synthesizer excluding the Σ-Δ modulator consumes 25.5mA in the case of 2.5V supply, and it occupies 3.9mm2(with a core area of 0.63mm2).

Key words: Σ-Δ modulator, frequency synthesizer, MASH, CMOS, PLL

CLC Number: