Correlation-driven topological phase transition from quantum anomalous Hall insulator to Mott insulator in monolayer VCl3 and VBr3

doi:10.7523/j.issn.2095-6134.2020.06.003

Abstract

Abstract: Based on the first-principle calculations, we propose that the monolayer VCl₃ and VBr₃ are quantum anomalous Hall insulators with in-plane magnetization without considering the correlation effect of the 3d electron-electron interaction. The band gap is predicted to be about 3.4 meV for VCl₃, but no global gap for VBr₃. It is interesting to note that VCl₃ (VBr₃) possesses a Chern number of C=3 (C=1) with three (one) chiral edge states. After considering correlation effect, we obtain Mott insulator if U>0.45 (U>0.35) eV for VCl₃ (VBr₃).

Key words: ferromagnetic semiconductor, large Chern number, Mott insulator

CLC Number:

O469

XU Yongfeng, SHENG Xianlei, ZHENG Qingrong. Correlation-driven topological phase transition from quantum anomalous Hall insulator to Mott insulator in monolayer VCl₃ and VBr₃[J]. , 2020, 37(6): 736-743.

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Correlation-driven topological phase transition from quantum anomalous Hall insulator to Mott insulator in monolayer VCl₃ and VBr₃

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