Self-Assembled Germanium Quantum Dots in Silicon Germanium Material System

doi:10.7523/j.issn.2095-6134.2003.4.019

Abstract

Abstract:

In Silicon-based optoelectronics research, the self-assembled Ge quantum dots are one of the most promising potential means to explore the novel properties of Si by applying the bandgap engineering. The lattice mismatch of 4.2% between the Ge and Si can provide us various nanostructures in a wide range of size, which can be utilized to realize the future electrical and optical devices. By introducing the growth techniques and device application perspectives of self-assembled Ge quantum dots, describing the morphological evolution of the Ge grown on Si (001) substrate and the optical and electronic properties of these nanostructure,the authors reveal the approaches to fabricate the ordered Ge quantum dots. Some novel findings in our work will be included, such as the reverse shape transition of the quantum dots,the self-embedding effect, the verification of band alignment of Ge quantum dots, the thermal relaxation model of the carriers in Ge/Si multilayer structure, and a new approach to fabricate the patterned substrate for ordered Ge quantum dots.

Key words: Ge quantum dots, Si-based optoelectronics, self-assembled nanostructure, heteroepitaxial crystal growth

CLC Number:

Huang Changjun, Wang Qiming. Self-Assembled Germanium Quantum Dots in Silicon Germanium Material System[J]. , 2003, 20(4): 510-516.

References

［1］C J Huang, X P Zhu, et al. Nanofabrication of grid-patterned substrate by holographic lithography. J Cryst Growth, 2002, 236:141～144

［2］C J Huang, Y Tang, et al. X-ray evidence for Ge/Si (001) island columns in multilayer structure. J Cryst Growth, 2001, 223: 99～103

［3］C J Huang, Y H Zuo, et al. Optical characterization of the Ge/Si (001) islands in multilayer structure. Proc SPIE, 2001, 4580:202～208

［4］C J -Huang, Y H Zuo, et al. Shape evolution of Ge/Si (001) islands induced by strain-driven alloying. Appl Phys Lett, 2001, 78(24): 3881～3883

［5］C J Huang, Y Tang, et al. Different transfer paths for thermally activated electrons and holes in self-organized Ge/Si (001) islands in a multilayer structure. Appl Phys Lett, 2001, 78(14): 2006～2008

［6］C J Huang, D Z Li, et al. Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1-x strained layers. Appl Phys Lett, 2000, 77(3): 391～393

［7］C J Huang, D Z Li, et al. Oblique alignment of columns of self-organized Ge/Si (001) islands in multilayer structure. Appl Phys Lett, 2000, 77(18): 2852～2854

［8］Y C Zhang, C J Huang, et al. Structure and photoluminescence study of InGaAs quantum dots on InAlAs wetting layer. Chin Phys Lett, 2001, 18:1411～1414

［9］Y C Zhang, C J Huang, et al. Thermal redistribution of photocarriers between bimodal quantum dots. J Appl Phys, 2001, 90:1973～1976

［10］Y C Zhang, C J Huang, et al. Optical properties of InGaAs quantum dots formed on InAlAs wetting layer. J Cryst Growth, 2001,224: 41～46

［11］F Gao, C J Huang, et al. Changing the size and shape of Ge island by chemical etching. J Cryst Growth, 2001, 231: 17～21

［12］Y C Zhang, C J Huang, et al. Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots. J Cryst Growth, 2000, 219:199～204

［13］D Li, C Huang, et al. Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe. J Cryst Growth, 2000, 213: 308～311

[1]	ZHANG Zihan, CUI Huijuan, YAN Qingbo, SU Gang. First-principles study on electronic structures of doped graphdiynes [J]. , 2019, 36(6): 721-728.
[2]	FANG Wuzhang, ZHANG Lichuan, YAN Qingbo, ZHENG Qingrong, SU Gang. Effects of strain on mechanical and electronic properties of SnSe and SnS auxetic materials [J]. , 2017, 34(1): 8-14.
[3]	ＸＩＮＧＨｕａｉＺｈｏｎｇＤＩＮＧＺｏｎｇＬｉｎｇＨＵＡＮＧＹａｎＬＩＡＮＧＥｒＪｕｎＣＨＥＮＸｉａｏＳｈｕａｎｇ. ＦｉｒｓｔｐｒｉｎｃｉｐｌｅｓｔｕｄｙｆｏｒｅｆｆｅｃｔｏｆｅｘｃｈａｎｇｅｃｏｒｒｅｌａｔｉｏｎｐｏｔｅｎｔｉａｌｏｎｌａｔｔｉｃｅｐａｒａｍｅｔｅｒａｎｄｂａｎｄｓｔｒｕｃｔｕｒｅｏｆＰｂＳ [J]. , 2008, 25(2): 167-171.
[4]	Yu Jinzhong, Wei Hongzhen, Yan Qinfeng, Xia Jinsong, Zhang Xiaofeng. Integrated MMI Optical Couplers and Optical Switches in Silicon-on-Insulator Technology [J]. , 2003, 20(1): 1-6.