X波段宽带低噪声放大器设计

doi:10.7523/j.issn.2095-6134.2008.3.017

中国科学院大学学报 ›› 2008, Vol. 25 ›› Issue (3): 408-412.DOI: 10.7523/j.issn.2095-6134.2008.3.017

X波段宽带低噪声放大器设计

谢涛，周以国，郭俊栋

中国科学院电子学研究所，北京 100080

收稿日期:1900-01-01 修回日期:1900-01-01 发布日期:2008-05-15

Design of an X Band Broadband Low Noise Amplifier

XIE Tao, ZHOU Yi-guo, GUO Jun-dong

Institute of Electronics Chinese Academy of Sciences, Beijing 100080, China

Received:1900-01-01 Revised:1900-01-01 Published:2008-05-15

摘要/Abstract

摘要： 介绍与实现了一种X波段宽带低噪声放大器（LNA）。该放大器选用NEC公司的低噪声放大管NE3210S01（HJFET），采用微带分支线匹配结构和两级级联的方式。利用ADS软件进行设计、优化和仿真。最后研制的放大器在10-13GHz范围内增益为（21.5±1）dB，噪声系数小于2 dB，驻波比小于1.8。

关键词: 低噪声放大器, NE3210S01, 噪声系数

Abstract: An X band broadband low noise amplifier (LNA) is presented. This amplifier, using NEC’s HJFET NE3210S01, had a microstrip stub matching structure and a two-stage topology. ADS was used as a tool to design, optimize and simulate. The designed amplifier exhibited broadband operation from 10GHz-13GHz with noise figure less than 2dB, Gain 21.5dB±1dB and SWR less than 1.8.

Key words: LNA, NE3210S01, Noise Figure

谢涛，周以国，郭俊栋. X波段宽带低噪声放大器设计[J]. 中国科学院大学学报, 2008, 25(3): 408-412.

XIE Tao, ZHOU Yi-guo, GUO Jun-dong. Design of an X Band Broadband Low Noise Amplifier[J]. , 2008, 25(3): 408-412.

X波段宽带低噪声放大器设计

Design of an X Band Broadband Low Noise Amplifier

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