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›› 2018, Vol. 35 ›› Issue (3): 302-307.DOI: 10.7523/j.issn.2095-6134.2018.03.003

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Spin-polarized transport through a device of single-ion magnet C18H23Er

ZHOU Jie, WANG Zhengchuan   

  1. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2017-03-02 Revised:2017-04-11 Online:2018-05-15

Abstract: We study the spin-polarized transport through devices of single molecule magnet. A device consisting of the scanning tunneling microscopy Co tip, the single-ion magnet of erbium, and the Au(111) substrate is set up. We calculate the spin-polarized I-V curves for the upward and downward structures of single-ion magnet at a small bias, and find that the tunnel magnetoresistance is as high as 120% and the efficiency of the spin filter at small bias is between 70%-100%. By comparing the spin rectification ratios of the two structures, we find that the downward structure has better spin rectifying effect. Based on the analyses of the transmission spectrum, the molecular projection Hamiltonian, and the projection device density of states, we give reasonable explainations for the above observations.

Key words: single-ion magnet, spin filter, spin rectification, tunnel magnetoresistance

CLC Number: