The Research Progress in Synthesis and Application of Gallium Nitride2Based Materials

doi:10.7523/j.issn.2095-6134.2005.5.002

Abstract

Abstract:

Gallium nitride is a novel kind of semiconductor,whose direct band gap is 3139eV at the room temperature. It has been proved to be a promising material for electronic and photoelectric devices. A good many of its growth methods have been discovered, and some of them had been implemented in production practice with monitoring systems. Some comparisons were made between different methods. The structure-performance dependence of GaN itself, GaN-based family and multinitrides have been summarized. The main fields of GaN-based material were presented. GaN-based material is being considered to be the excellent candidate of electronic device potentially used in high temperature,high-power and worst environment surroundings.

Key words: gallium nitride, semiconductor, preparation, application

CLC Number:

TN304

PENG Bi-Xian, QIAN Hai-Sheng, YUE Jun, CHEN Li-Juan, WANG Chong-Chen, ZHANG Li-Juan. The Research Progress in Synthesis and Application of Gallium Nitride2Based Materials[J]. , 2005, 22(5): 536-544.

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